CEM-365iS

The Contrast Enhancement Material (CEM) Process is a unique photolithography technique designed to extend and enhance both the process latitude and resolution limits of optical lithography systems. The purpose of this guideline is to provide information on the theory, characteristics, and use of CEM 365iS.

Description

Contrast enhancement is a microlithography technique which extends the practical limits of optical lithography systems. This improvement in resolution, depth of focus and reduced interference, allows the fabrication of new and denser integrated circuits without the required capital equipment investment.

Significant benefits of contrast enhancement can be recognized from the following performance features:

  • Increase Depth of Focus Latitude
  • Reduced Linewidth Change Over Steps
  • Extends Resolution Limits
  • Generates Vertical Resist Profiles
  • Increases Develop/Exposure Latitude
  • Reduces Proximity and Interference Effects
  • Increased integrity in high aspect ratio features
  • Simple/Low defect Process

Additional information

Solids

14 ± 1%

Viscosity @ 25° C

5.4 ± 0.5 cstks

Refractive Index

1.55

Film thickness

3,900 ± 200 Å @ 4,000 rpm

Appearance

Clear, yellow

Initial transmission (365 nm)

< 6.5 %

Final transmission (365 nm)

> 83.5 %

No

1.524

N1

120.7

N2 - K0 - K1 - K2

0.000

Product Documents

Data Sheet

X

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