I-line / G-line / NOVOLAK and Chemically Amplified Resists

I-line / G-line / NOVOLAK and Chemically Amplified Resists

Shin-Etsu MicroSi’s thick film positive DNQ photoresists have been formulated to provide extraordinary lithography results. The properties of these resists include straight vertical profiles, outstanding depth of focus, etch resistance for aggressive process environments, outstanding plating performance, superior adhesion, low optical absorption and high aspect ratio. The exceptional properties of SIPR are due to a one component photoresist in which the DNQ photoresist is bonded to the main resin. SIPR photoresists are widely utilized in semiconductor, GaAs, thin film head, MEMS, bump and other specialty applications.

SIPR 3251

Shin-Etsu MicroSi’s SIPR 3251 I-line/G-line photoresist has a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick films. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductors, thin film heads, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. Though TMAH developer is preferred, KOH is also acceptable.

SIPR 9740

Shin-Etsu MicroSi’s SIPR 9740 I-line/G-line photoresist has a printing capability of less than 300nm isolated line and semi-dense lines in 1-15 um thick photoresist. This DNQ photoresist is widely utilized in Semiconductor, MEMS, thin film head and microelectronics applications that require superior process latitude for lift-off, plating, wet etching, and RIE. Though TMAH developer is preferred, KOH is also acceptable.

SIPR 9332

Shin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching environment. Though TMAH developer is preferred, KOH is also acceptable.

SIPR 9361

Shin-Etsu MicroSi’s SIPR 9361 I-line/G-line photoresist has a printing capability of less than 1 um isolated line and high profile images in 6 um thick film photoresist and designed as a permanent insulation layer. This DNQ photoresist is widely used in semiconductor, MEMS and thin film head for passivation, stress buffer layer and permanent insulation layer that require high cross linking and low thermal expansion properties. Though TMAH developer is preferred, KOH is also acceptable.

SIPR 9684N Single Layer Lift Off

Shin-Etsu MicroSi’s SIPR 9684N resist is formulated for single layer lift process without using sacrificial underlayers to produce controllable undercut. This I-line positive lift off photoresist is widely used in MEMS, thin film head and other specialty applications that require desired undercut with simple one step process like standard photoresist process parameters. TMAH developer is required.

Chemically Amplified

Shin-Etsu MicroSi’s offers thick Chemically Amplified, positive tone SIPR I-line photoresist for specialty applications.  

SIPR 7610 (Spin-On Liquid) and SIPR 7610-DF (Dry Film)

Shin-Etsu MicroSi’s SIPR 7610 photoresist film is formulated for straight side wall profiles with printing capability of 30um in 120um thick film I-line photoresist. This I-line photoresist is widely used in MEMS, bumps, thin film head and other specialty applications that require superior thermal/chemical stability with excellent photo speed capability for extremely aggressive plating and dry etching environment. The I-line photoresist can be developed using TMAH or KOH developer.
  • SIPR 7610 (Spin-on Liquid): under 40um thickness
  • SIP 7610-DF (Dry Film): 100um single lamination & over 100um (multi-lamination)