SIPR 3251 10-20µm

Shin-Etsu MicroSi’s SIPR 3251 I-line/G-line photoresist has a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick films. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductors, thin film heads, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. Though TMAH developer is preferred, KOH is also acceptable.

Description

Shin-Etsu MicroSi’s SIPR 3251 I-line/G-line photoresist has a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick films. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductors, thin film heads, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. Though TMAH developer is preferred, KOH is also acceptable.

 

Product Documents

Technical Data Sheet

X

Download Request

  • To access data sheets and product information from Shin-Etsu MicroSi, simply complete the form and click "View". Links will then be enabled.

  • Hidden